Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors

Yu Hao Chang; Yutaro Iyama; Kaito Tadenuma; Shuto Kawaguchi; Teruaki Takarada; Shaili Falina; Mohd Syamsul; Hiroshi Kawarada

doi:10.1002/pssa.202000278

Over 59 mV pH⁻¹ Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors

Yu Hao Chang, Yutaro Iyama, Kaito Tadenuma, Shuto Kawaguchi, Teruaki Takarada, Shaili Falina, Mohd Syamsul, Hiroshi Kawarada^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH⁻¹ in acid and alkaline pH regions, respectively.

Original language	English
Article number	2000278
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	218
Issue number	5
DOIs	https://doi.org/10.1002/pssa.202000278
Publication status	Published - 2021 Mar

Keywords

boron-doping
field-effect transistors
fluorocarbon
pH sensing
polycrystalline diamond

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.202000278

Cite this

Chang, Y. H., Iyama, Y., Tadenuma, K., Kawaguchi, S., Takarada, T., Falina, S., Syamsul, M., & Kawarada, H. (2021). Over 59 mV pH⁻¹ Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors. Physica Status Solidi (A) Applications and Materials Science, 218(5), Article 2000278. https://doi.org/10.1002/pssa.202000278

Over 59 mV pH⁻¹ Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors. / Chang, Yu Hao; Iyama, Yutaro; Tadenuma, Kaito et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 218, No. 5, 2000278, 03.2021.

Research output: Contribution to journal › Article › peer-review

Chang, YH, Iyama, Y, Tadenuma, K, Kawaguchi, S, Takarada, T, Falina, S, Syamsul, M & Kawarada, H 2021, 'Over 59 mV pH⁻¹ Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors', Physica Status Solidi (A) Applications and Materials Science, vol. 218, no. 5, 2000278. https://doi.org/10.1002/pssa.202000278

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abstract = "pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.",

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