Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits

H. Kawarada*, K. Ota, Y. Fu, A. Narita, X. Zhu, A. Hiraiwa, T. Fujishima

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

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Earth and Planetary Sciences

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