P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri*, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    72 Citations (Scopus)


    A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

    Original languageEnglish
    Pages (from-to)2753-2758
    Number of pages6
    JournalAdvanced Materials
    Issue number24
    Publication statusPublished - 2011 Jun 24


    • Doping
    • Electronic Mechanism
    • Organic Electronics
    • Organic Field-Effect Transistors
    • Transistor

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering


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