P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

Atsushi Nishikawa*, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

Original languageEnglish
Pages (from-to)3387-3390
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2006 Apr 25
Externally publishedYes


  • Breakdown voltage
  • InGaN/GaN
  • N-SiC
  • On-state resistance
  • Vertical conducting structure

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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