P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Takashi Kobayashi; Simpei Iijima; Atsushi Hiraiwa

P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Takashi Kobayashi^*, Simpei Iijima, Atsushi Hiraiwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In situ boron-doped Si films are deposited in an amorphous state using Si₂H₆ and B₂H₆. By addition of B₂H₆, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	32
Issue number	5 A
Publication status	Published - 1993 May 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon",

abstract = "In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.",

author = "Takashi Kobayashi and Simpei Iijima and Atsushi Hiraiwa",

year = "1993",

month = may,

day = "1",

language = "English",

volume = "32",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

number = "5 A",

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TY - JOUR

T1 - P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

AU - Kobayashi, Takashi

AU - Iijima, Simpei

AU - Hiraiwa, Atsushi

PY - 1993/5/1

Y1 - 1993/5/1

N2 - In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

AB - In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

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M3 - Article

AN - SCOPUS:0027589592

SN - 0021-4922

VL - 32

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 5 A

ER -

P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Abstract

ASJC Scopus subject areas

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