Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

H. Nishikawa; R. Nakamura; R. Tohmon; Y. Ohki; Y. Hama; Y. Sakurai; K. Nagasawa

Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

H. Nishikawa^*, R. Nakamura, R. Tohmon, Y. Ohki, Y. Hama, Y. Sakurai, K. Nagasawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10¹⁶/cm³, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O₂^- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O₂ and H₂O.

Original language	English
Pages (from-to)	69-78
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1327
Publication status	Published - 1990 Dec 1
Event	Properties and Characteristics of Optical Glass II - San Diego, CA, USA Duration: 1990 Jul 12 → 1990 Jul 13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

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title = "Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses",

abstract = "High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.",

author = "H. Nishikawa and R. Nakamura and R. Tohmon and Y. Ohki and Y. Hama and Y. Sakurai and K. Nagasawa",

year = "1990",

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pages = "69--78",

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TY - JOUR

T1 - Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

AU - Nishikawa, H.

AU - Nakamura, R.

AU - Tohmon, R.

AU - Ohki, Y.

AU - Hama, Y.

AU - Sakurai, Y.

AU - Nagasawa, K.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.

AB - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.

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M3 - Conference article

AN - SCOPUS:0025539363

SN - 0277-786X

VL - 1327

SP - 69

EP - 78

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Properties and Characteristics of Optical Glass II

Y2 - 12 July 1990 through 13 July 1990

ER -

Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

Abstract

ASJC Scopus subject areas

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