PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.

H. Shinohara^*, K. Anami, M. Yoshimoto, Y. Hirata, T. Nakano

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	106-107
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1982
Externally published	Yes

ASJC Scopus subject areas

@article{2710f90dae0f4b27a1de23ea924819bb,

title = "PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.",

author = "H. Shinohara and K. Anami and M. Yoshimoto and Y. Hirata and T. Nakano",

year = "1982",

language = "English",

pages = "106--107",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - PARASITIC RESISTANCE EFFECTS ON STATIC MOS RAM.

AU - Shinohara, H.

AU - Anami, K.

AU - Yoshimoto, M.

AU - Hirata, Y.

AU - Nakano, T.

PY - 1982

Y1 - 1982

UR - http://www.scopus.com/inward/record.url?scp=0020240421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020240421&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0020240421

SN - 0743-1562

SP - 106

EP - 107

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

ER -