Performance of all-optical AND gate using photonic-crystal QDSOA at 160 Gb/s

T. Matsumoto; K. Komatsu; G. Hosoya; H. Yashima

doi:10.1049/el.2018.0371

Performance of all-optical AND gate using photonic-crystal QDSOA at 160 Gb/s

T. Matsumoto^*, K. Komatsu, G. Hosoya, H. Yashima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.

Original language	English
Pages (from-to)	580-582
Number of pages	3
Journal	Electronics Letters
Volume	54
Issue number	9
DOIs	https://doi.org/10.1049/el.2018.0371
Publication status	Published - 2018 May 3
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2018.0371

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abstract = "An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.",

author = "T. Matsumoto and K. Komatsu and G. Hosoya and H. Yashima",

note = "Funding Information: Acknowledgment: This work was supported in part by JSPS KAKENHI grant numbers JP16K18108 and JP17K06443. Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2018.",

year = "2018",

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doi = "10.1049/el.2018.0371",

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AU - Matsumoto, T.

AU - Komatsu, K.

AU - Hosoya, G.

AU - Yashima, H.

N1 - Funding Information: Acknowledgment: This work was supported in part by JSPS KAKENHI grant numbers JP16K18108 and JP17K06443. Publisher Copyright: © The Institution of Engineering and Technology 2018.

PY - 2018/5/3

Y1 - 2018/5/3

N2 - An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.

AB - An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.

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JO - Electronics Letters

JF - Electronics Letters

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Performance of all-optical AND gate using photonic-crystal QDSOA at 160 Gb/s

Abstract

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