pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors

Shuto Kawaguchi*, Reona Nomoto, Hirotaka Sato, Teruaki Takarada, Yu Hao Chang, Hiroshi Kawarada*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Diamond has many appealing properties, including biocompatibility, ease of surface modification, and chemical–physical stability. In this study, the temperature dependence of the pH-sensitivity of a oxygen-terminated boron-doped diamond solution gate FET (C-O BDD SGFET) is reported. The C-O BDD SGFET operated in an electrolyte solution at 95 C. At 80 C, the pH sensitivity of C-O BDD SGFET dropped to 4.27 mV/pH. As a result, we succeeded in developing a highly sensitive pH sensing system at −54.6 mV/pH at 80 C by combining it with a highly pH sensitive stainless-steel vessel.

Original languageEnglish
Article number1807
JournalSensors
Volume22
Issue number5
DOIs
Publication statusPublished - 2022 Mar 1

Keywords

  • Boron-doped diamond
  • Diamond solution gate field effect transistor
  • High temperature
  • PH insensitive
  • Stainless-steel vessel

ASJC Scopus subject areas

  • Analytical Chemistry
  • Information Systems
  • Atomic and Molecular Physics, and Optics
  • Biochemistry
  • Instrumentation
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors'. Together they form a unique fingerprint.

Cite this