pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface

Kwang Soup Song; Yusuke Nakamura; Yuichi Sasaki; Munenori Degawa; Jung Hoon Yang; Hiroshi Kawarada

doi:10.1016/j.aca.2006.04.051

pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface

Kwang Soup Song^*, Yusuke Nakamura, Yuichi Sasaki, Munenori Degawa, Jung Hoon Yang, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We have introduced pH sensors fabricated on diamond thin films through modification of the surface-terminated atom. We directly modified the diamond surface from hydrogen to amine or oxygen with ultraviolet (UV) irradiation under ammonia gas. The quantified amine site based on the spectra obtained by X-ray photoelectron spectroscopy (XPS) is 26% (2.6 × 10¹⁴ cm^-2) with UV irradiation for 8 h and its coverage is dependent on the UV irradiation time. This directly aminated diamond surface is stable with long-term exposure in air and electrolyte solution. We fabricated diamond solution-gate field-effect transistors (SGFETs) without insulating layers on the channel surface. These diamond SGFETs with amine modified by direct amination are sensitive to pH (45 mV/pH) over a wide range from pH 2 to 12 and their sensitivity is dependent on the density of binding sites corresponding to UV irradiation time on the channel surface.

Original language	English
Pages (from-to)	3-8
Number of pages	6
Journal	Analytica Chimica Acta
Volume	573-574
DOIs	https://doi.org/10.1016/j.aca.2006.04.051
Publication status	Published - 2006 Jul 28

Keywords

Diamond
Directly aminated channel surface
Solution-gate field-effect transistors (SGFETs)
X-ray photoelectron spectroscopy (XPS)
pH sensors

ASJC Scopus subject areas

Analytical Chemistry
Biochemistry
Environmental Chemistry
Spectroscopy

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10.1016/j.aca.2006.04.051

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@article{541d4a9aaaa245619a2c4cd07687f41c,

title = "pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface",

abstract = "We have introduced pH sensors fabricated on diamond thin films through modification of the surface-terminated atom. We directly modified the diamond surface from hydrogen to amine or oxygen with ultraviolet (UV) irradiation under ammonia gas. The quantified amine site based on the spectra obtained by X-ray photoelectron spectroscopy (XPS) is 26% (2.6 × 1014 cm-2) with UV irradiation for 8 h and its coverage is dependent on the UV irradiation time. This directly aminated diamond surface is stable with long-term exposure in air and electrolyte solution. We fabricated diamond solution-gate field-effect transistors (SGFETs) without insulating layers on the channel surface. These diamond SGFETs with amine modified by direct amination are sensitive to pH (45 mV/pH) over a wide range from pH 2 to 12 and their sensitivity is dependent on the density of binding sites corresponding to UV irradiation time on the channel surface.",

keywords = "Diamond, Directly aminated channel surface, Solution-gate field-effect transistors (SGFETs), X-ray photoelectron spectroscopy (XPS), pH sensors",

author = "Song, {Kwang Soup} and Yusuke Nakamura and Yuichi Sasaki and Munenori Degawa and Yang, {Jung Hoon} and Hiroshi Kawarada",

note = "Funding Information: This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work was also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2006",

month = jul,

day = "28",

doi = "10.1016/j.aca.2006.04.051",

language = "English",

volume = "573-574",

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journal = "Analytica Chimica Acta",

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T1 - pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface

AU - Song, Kwang Soup

AU - Nakamura, Yusuke

AU - Sasaki, Yuichi

AU - Degawa, Munenori

AU - Yang, Jung Hoon

AU - Kawarada, Hiroshi

N1 - Funding Information: This work was supported by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work was also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2006/7/28

Y1 - 2006/7/28

N2 - We have introduced pH sensors fabricated on diamond thin films through modification of the surface-terminated atom. We directly modified the diamond surface from hydrogen to amine or oxygen with ultraviolet (UV) irradiation under ammonia gas. The quantified amine site based on the spectra obtained by X-ray photoelectron spectroscopy (XPS) is 26% (2.6 × 1014 cm-2) with UV irradiation for 8 h and its coverage is dependent on the UV irradiation time. This directly aminated diamond surface is stable with long-term exposure in air and electrolyte solution. We fabricated diamond solution-gate field-effect transistors (SGFETs) without insulating layers on the channel surface. These diamond SGFETs with amine modified by direct amination are sensitive to pH (45 mV/pH) over a wide range from pH 2 to 12 and their sensitivity is dependent on the density of binding sites corresponding to UV irradiation time on the channel surface.

AB - We have introduced pH sensors fabricated on diamond thin films through modification of the surface-terminated atom. We directly modified the diamond surface from hydrogen to amine or oxygen with ultraviolet (UV) irradiation under ammonia gas. The quantified amine site based on the spectra obtained by X-ray photoelectron spectroscopy (XPS) is 26% (2.6 × 1014 cm-2) with UV irradiation for 8 h and its coverage is dependent on the UV irradiation time. This directly aminated diamond surface is stable with long-term exposure in air and electrolyte solution. We fabricated diamond solution-gate field-effect transistors (SGFETs) without insulating layers on the channel surface. These diamond SGFETs with amine modified by direct amination are sensitive to pH (45 mV/pH) over a wide range from pH 2 to 12 and their sensitivity is dependent on the density of binding sites corresponding to UV irradiation time on the channel surface.

KW - Diamond

KW - Directly aminated channel surface

KW - Solution-gate field-effect transistors (SGFETs)

KW - X-ray photoelectron spectroscopy (XPS)

KW - pH sensors

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ER -

pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface

Abstract

Keywords

ASJC Scopus subject areas

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