Phosphosilicate glass passivation for ULSI Cu metallization

H. Miyazaki*, H. Kojima, A. Hiraiwa, Y. Homma, K. Murakami

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Phosphosilicate glass (PSG) passivation for Cu metallization is proposed, and the Cu diffusion rate into Si substrates through various oxide structures is measured quantitatively. Cu diffusion is suppressed effectively by the PSG passivation resulting in reduction of the diffused Cu atoms to about an order of magnitude less than when passivated by nondoped SiO2 films. The passivation is effective when the annealing temperature is less than 600°C. The apparent activation energy of Cu diffusion for the nondoped SiO2/Si substrate and PSG/nondoped SiO2/Si is 1.2 and 1.6 eV, respectively. However, most of the diffused Cu precipitates near the oxide/Si substrate interface and the amount of the diffused Cu is comparable to the limit for ordinary device contamination. Thus, further improvement or optimization of the passivation layer structure is desired.

Original languageEnglish
Pages (from-to)3264-3267
Number of pages4
JournalJournal of the Electrochemical Society
Issue number11
Publication statusPublished - 1992 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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