Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato*, Makoto Fujimaki, Takashi Noma, Yoshimichi Ohki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Refractive index change is shown to be induced by the irradiation of ultraviolet photons in hydrogenated amorphous silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition. The mechanism of the index change and its dependence on the nitrogen content were investigated by electron spin resonance and scanning electron microscopy. It is concluded that the index change is due mainly to densification, and that the contribution of the formation of paramagnetic defects is only slight. To demonstrate the versatility of this refractive index change, a planar diffraction grating was fabricated.

Original languageEnglish
Pages (from-to)6350-6353
Number of pages4
JournalJournal of Applied Physics
Issue number10 I
Publication statusPublished - 2002 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride'. Together they form a unique fingerprint.

Cite this