Photoemission spectroscopy of Ta 2NiSe 5

Y. Wakisaka; T. Sudayama; K. Takubo; T. Mizokawa; N. L. Saini; M. Arita; H. Namatame; M. Taniguchi; N. Katayama; M. Nohara; H. Takagi

doi:10.1007/s10948-012-1526-0

Photoemission spectroscopy of Ta ₂NiSe ₅

Y. Wakisaka^*, T. Sudayama, K. Takubo, T. Mizokawa, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta ₂NiSe ₅ which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

Original language	English
Pages (from-to)	1231-1234
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	25
Issue number	5
DOIs	https://doi.org/10.1007/s10948-012-1526-0
Publication status	Published - 2012 Jul
Externally published	Yes

Keywords

Excitonic insulator
Layered chalcogenide
Photoemission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1007/s10948-012-1526-0

Cite this

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title = "Photoemission spectroscopy of Ta 2NiSe 5 ",

abstract = "We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.",

keywords = "Excitonic insulator, Layered chalcogenide, Photoemission",

author = "Y. Wakisaka and T. Sudayama and K. Takubo and T. Mizokawa and Saini, {N. L.} and M. Arita and H. Namatame and M. Taniguchi and N. Katayama and M. Nohara and H. Takagi",

note = "Funding Information: Acknowledgements This research is supported by the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science.",

year = "2012",

month = jul,

doi = "10.1007/s10948-012-1526-0",

language = "English",

volume = "25",

pages = "1231--1234",

journal = "Journal of Superconductivity and Novel Magnetism",

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publisher = "Springer New York",

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TY - JOUR

T1 - Photoemission spectroscopy of Ta 2NiSe 5

AU - Wakisaka, Y.

AU - Sudayama, T.

AU - Takubo, K.

AU - Mizokawa, T.

AU - Saini, N. L.

AU - Arita, M.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Katayama, N.

AU - Nohara, M.

AU - Takagi, H.

N1 - Funding Information: Acknowledgements This research is supported by the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science.

PY - 2012/7

Y1 - 2012/7

N2 - We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

AB - We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

KW - Excitonic insulator

KW - Layered chalcogenide

KW - Photoemission

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