Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films

Takashi Noma*, Kwang Soo Seol, Makoto Fujimaki, Hiromitsu Kato, Takashi Watanabe, Yoshimichi Ohki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Photoluminescence spectra were observed for hydrogenated oxygen-rich silicon oxynitride films with different N/O ratios, deposited by plasma-enhanced chemical vapor deposition. In the sample with a small ratio of N/O, two luminescence bands at 4.4 and 2.7 eV originated from silicon homobonds in SiO2 were observed, while a luminescence band at 2.6-2.9 eV which has very similar properties to the one observed in SiNx was observed in the sample with a large ratio of N/O. The results of Fourier-transform infrared spectroscopy, electron spin resonance, X-ray photoelectron spectroscopy and scanning electron microscopy indicated that the luminescence band at 2.6-2.9 cV results from Si-N bonds in the films and that the present films have regions where Si-N bonds gathered.

Original languageEnglish
Pages (from-to)6587-6593
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 A
Publication statusPublished - 2000 Dec 1


  • Luminescence
  • Photoluminescence
  • Silicon nitride
  • Silicon oxide
  • Silicon oxynitride

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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