Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

Nitrogen atomic-layer-doped and uniformly doped GaAs were grown by MOVPE using dimethylhydrazine on a (001) plane. They showed several sharp photoluminescence lines with a full width at half maximum less than 1 meV at 8 K. Compared with uniformly doped GaAs, the photoluminescence intensity of the nitrogen-related line at the longest wavelength is enhanced in nitrogen atomic-layer-doped GaAs, suggesting that it is easier to form nitrogen pairs during atomic layer doping. To investigate the sharp nitrogen-related lines, we also grew GaAs with double atomic-layer-doped planes and varied the distance between the two planes. When the two planes are brought close to 1 nm, two new lines, NN_C and NN_D, appear between the two nitrogen-related lines, NN_A and NN_B, observed in a single nitrogen atomic-layer-doped GaAs. The NN_C and NN_D lines are also observed in uniformly doped GaAs. Therefore, NN_A and NN_B originate from excitons bound to pairs of nitrogen atoms, both of which are in the (001) plane, while NN_C and NN_D originate from those bound to pairs of nitrogen atoms, of which pairing directions are not included in the (001) plane. From the photoluminescence characteristics, distances between nitrogen atoms of a pair are estimated for each line.