Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

X. D. Chen, S. Fung*, C. D. Beling, Y. Huang, Q. Li, S. J. Xu, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Beryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.

Original languageEnglish
Pages (from-to)67-71
Number of pages5
JournalSolid State Communications
Issue number2-3
Publication statusPublished - 2002 Jan 2
Externally publishedYes


  • A. Silicon carbide
  • C. Be implantation
  • C. Beryllium acceptors
  • Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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