Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

X. D. Chen; S. Fung; C. D. Beling; Y. Huang; Q. Li; S. J. Xu; M. Gong; T. Henkel; H. Tanoue; Naoto Kobayashi

doi:10.1016/S0038-1098(01)00478-1

Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

X. D. Chen, S. Fung^*, C. D. Beling, Y. Huang, Q. Li, S. J. Xu, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Beryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect D_II-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.

Original language	English
Pages (from-to)	67-71
Number of pages	5
Journal	Solid State Communications
Volume	121
Issue number	2-3
DOIs	https://doi.org/10.1016/S0038-1098(01)00478-1
Publication status	Published - 2002 Jan 2
Externally published	Yes

Keywords

A. Silicon carbide
C. Be implantation
C. Beryllium acceptors
Photoluminescence

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/S0038-1098(01)00478-1

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title = "Photoluminescence characterization of beryllium-implanted 6H-silicon carbide",

abstract = "Beryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.",

keywords = "A. Silicon carbide, C. Be implantation, C. Beryllium acceptors, Photoluminescence",

author = "Chen, {X. D.} and S. Fung and Beling, {C. D.} and Y. Huang and Q. Li and Xu, {S. J.} and M. Gong and T. Henkel and H. Tanoue and Naoto Kobayashi",

year = "2002",

month = jan,

day = "2",

doi = "10.1016/S0038-1098(01)00478-1",

language = "English",

volume = "121",

pages = "67--71",

journal = "Solid State Communications",

issn = "0038-1098",

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number = "2-3",

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TY - JOUR

T1 - Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

AU - Chen, X. D.

AU - Fung, S.

AU - Beling, C. D.

AU - Huang, Y.

AU - Li, Q.

AU - Xu, S. J.

AU - Gong, M.

AU - Henkel, T.

AU - Tanoue, H.

AU - Kobayashi, Naoto

PY - 2002/1/2

Y1 - 2002/1/2

N2 - Beryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.

AB - Beryllium has been implanted into both n- and p-type 6H-SiC with post-implantation annealing at 1600 °C. Photoluminescence (PL) measurements have been performed, and PL lines at 420.5, 431 nm, and a broad band at around 505 nm have been observed. The line at 420.5 nm is attributed to an intrinsic defect DII-center induced by beryllium implantation. The effects of excitation intensity and temperature during the PL experiments are investigated. Based on the excitation laser dependence PL result, the new doublet lines at around 431 nm are thought to be associated with beryllium related bound excitons. The broad band corresponding to the green luminescence at room temperature has been attributed to the recombination of free carriers to beryllium bound levels.

KW - A. Silicon carbide

KW - C. Be implantation

KW - C. Beryllium acceptors

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0037005681&partnerID=8YFLogxK

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U2 - 10.1016/S0038-1098(01)00478-1

DO - 10.1016/S0038-1098(01)00478-1

M3 - Article

AN - SCOPUS:0037005681

SN - 0038-1098

VL - 121

SP - 67

EP - 71

JO - Solid State Communications

JF - Solid State Communications

IS - 2-3

ER -

Photoluminescence characterization of beryllium-implanted 6H-silicon carbide

Abstract

Keywords

ASJC Scopus subject areas

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