Photoluminescence in polysilane alloys

N. Matsumoto; S. Furukawa; K. Takeda

doi:10.1016/0038-1098(85)90072-9

Photoluminescence in polysilane alloys

N. Matsumoto^*, S. Furukawa, K. Takeda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

Original language	English
Pages (from-to)	881-884
Number of pages	4
Journal	Solid State Communications
Volume	53
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(85)90072-9
Publication status	Published - 1985 Mar
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(85)90072-9

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abstract = "Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.",

author = "N. Matsumoto and S. Furukawa and K. Takeda",

year = "1985",

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T1 - Photoluminescence in polysilane alloys

AU - Matsumoto, N.

AU - Furukawa, S.

AU - Takeda, K.

PY - 1985/3

Y1 - 1985/3

N2 - Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

AB - Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

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JO - Solid State Communications

JF - Solid State Communications

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Photoluminescence in polysilane alloys

Abstract

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