Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio; Hiromitsu Kato; Yoshimichi Ohki; Kwang Soo Seol; Takashi Noma

Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio^*, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The photoluminescence (PL) in silicon-rich a-SiN_x:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiN_x:H films.

Original language	English
Pages	79-82
Number of pages	4
Publication status	Published - 2001 Dec 1
Event	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan Duration: 2001 Nov 19 → 2001 Nov 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
Country/Territory	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

Kashio, N., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Photoluminescence properties of hydrogenated amorphous silicon nitride. 79-82. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Photoluminescence properties of hydrogenated amorphous silicon nitride. / Kashio, Norihide; Kato, Hiromitsu; Ohki, Yoshimichi et al.
2001. 79-82 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Research output: Contribution to conference › Paper › peer-review

Kashio, N, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, 'Photoluminescence properties of hydrogenated amorphous silicon nitride', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 79-82.

Kashio N, Kato H, Ohki Y, Seol KS, Noma T. Photoluminescence properties of hydrogenated amorphous silicon nitride. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Kashio, Norihide ; Kato, Hiromitsu ; Ohki, Yoshimichi et al. / Photoluminescence properties of hydrogenated amorphous silicon nitride. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

@conference{3392379c5572422d9b378d8632437a9c,

title = "Photoluminescence properties of hydrogenated amorphous silicon nitride",

abstract = "The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.",

author = "Norihide Kashio and Hiromitsu Kato and Yoshimichi Ohki and Seol, {Kwang Soo} and Takashi Noma",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "79--82",

note = "Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems ; Conference date: 19-11-2001 Through 22-11-2001",

}

TY - CONF

T1 - Photoluminescence properties of hydrogenated amorphous silicon nitride

AU - Kashio, Norihide

AU - Kato, Hiromitsu

AU - Ohki, Yoshimichi

AU - Seol, Kwang Soo

AU - Noma, Takashi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

AB - The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

UR - http://www.scopus.com/inward/record.url?scp=0035720904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035720904&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035720904

SP - 79

EP - 82

T2 - Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems

Y2 - 19 November 2001 through 22 November 2001

ER -

Photoluminescence properties of hydrogenated amorphous silicon nitride

Abstract

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ASJC Scopus subject areas

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