Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis

H. Katsumata; Naoto Kobayashi; Y. Makita; M. Hasegawa; N. Hayashi; H. Shibata; S. Uekusa

Photoluminescence studies of epitaxial Si_1-xGe_x and Si_1-x-yGe_xC_y, layers on Si formed by ion beam synthesis

H. Katsumata, Naoto Kobayashi^*, Y. Makita, M. Hasegawa, N. Hayashi, H. Shibata, S. Uekusa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si_1-x-yGe_x and Si_1-x-yGe_xC_y layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I²) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si_1-x-yGe_xC_y samples showed G-line (C_s-Si_i-C_s complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I₁ non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si_1-x-yGe_xC_y samples showed neither G-line nor I₁-related emissions, which indicates that good crystalline Si_1-x-yGe_xC_y layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar⁺ bombardment.

Original language	English
Pages (from-to)	146-150
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	121
Issue number	1-4
Publication status	Published - 1997 Jan
Externally published	Yes

ASJC Scopus subject areas

Surfaces, Coatings and Films
Instrumentation
Surfaces and Interfaces

Cite this

Photoluminescence studies of epitaxial Si_1-xGe_x and Si_1-x-yGe_xC_y, layers on Si formed by ion beam synthesis. / Katsumata, H.; Kobayashi, Naoto; Makita, Y. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 121, No. 1-4, 01.1997, p. 146-150.

Research output: Contribution to journal › Article › peer-review

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title = "Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis",

abstract = "Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.",

author = "H. Katsumata and Naoto Kobayashi and Y. Makita and M. Hasegawa and N. Hayashi and H. Shibata and S. Uekusa",

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T1 - Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy, layers on Si formed by ion beam synthesis

AU - Katsumata, H.

AU - Kobayashi, Naoto

AU - Makita, Y.

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Shibata, H.

AU - Uekusa, S.

PY - 1997/1

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N2 - Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.

AB - Low temperature (2 K) photoluminescence (PL) properties of epitaxial Si1-x-yGex and Si1-x-yGexCy layers on Si (x = 0.13 and y = 0.014 at peak concentration) formed by ion beam synthesis (IBS) have been investigated. Samples were prepared by a high-dose Ge with/without C ion implantation (I2) at room temperature and by subsequent three different crystallization techniques: (i) furnace annealing (FA) process up to 840°C, (ii) ion beam-induced epitaxial crystallization (IBIEC) process with 400 keV Ge or Ar ions at 300-350°C, and (iii) IBIEC process followed by FA process up to 640°C (IBIEC + FA). Although FA-grown Si1-x-yGexCy samples showed G-line (Cs-Sii-Cs complex) emission at 0.969 eV, IBIEC-grown samples presented a sharp I1 non-phonon emission at 1.0193 eV. This indicates that C atoms agglomeration is dominant for FA-grown samples, while a creation of trigonal tetravacancy cluster is dominant for IBIEC-grown samples. On the other hand, (IBIEC with Ge ions + FA)-grown Si1-x-yGexCy samples showed neither G-line nor I1-related emissions, which indicates that good crystalline Si1-x-yGexCy layers without C agglomeration were formed by this process. In contrast, (IBIEC with Ar ions + FA)-grown samples exhibited novel successive PL vibronic sidebands at 0.98-1.03 eV. From their excitation power dependence measurements, they were found to be associated with exciton bound to defects levels created by Ar+ bombardment.

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IS - 1-4

ER -

Photoluminescence studies of epitaxial Si_1-xGe_x and Si_1-x-yGe_xC_y, layers on Si formed by ion beam synthesis

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