Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe 2 thin films

Sathiabama Thiru; Miki Fujita; Atsushi Kawaharazuka; Yoshiji Horikoshi

doi:10.1007/s00339-013-7951-5

Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe ₂ thin films

Sathiabama Thiru^*, Miki Fujita, Atsushi Kawaharazuka, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Photoluminescence (PL) characteristics havec been studied on undoped and Si-doped CuGaSe₂ single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-toacceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.

Original language	English
Pages (from-to)	257-261
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	113
Issue number	2
DOIs	https://doi.org/10.1007/s00339-013-7951-5
Publication status	Published - 2013 Nov

ASJC Scopus subject areas

Materials Science(all)
Chemistry(all)

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title = "Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe 2 thin films",

abstract = "Photoluminescence (PL) characteristics havec been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-toacceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.",

author = "Sathiabama Thiru and Miki Fujita and Atsushi Kawaharazuka and Yoshiji Horikoshi",

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T1 - Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe 2 thin films

AU - Thiru, Sathiabama

AU - Fujita, Miki

AU - Kawaharazuka, Atsushi

AU - Horikoshi, Yoshiji

PY - 2013/11

Y1 - 2013/11

N2 - Photoluminescence (PL) characteristics havec been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-toacceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.

AB - Photoluminescence (PL) characteristics havec been studied on undoped and Si-doped CuGaSe2 single crystal thin films grown on GaAs (001) substrate by migration-enhanced epitaxy. Room temperature PL spectrum of an undoped layer clearly shows free excitonic emission bands related to the minimum band-edge and to the split-off valence band, but no discernible emission has been observed in the low energy area. At 4.2 K, the excitonic emission due to the split-off valence band disappears. Instead, two additional emissions appear at 1.68 and 1.715 eV which are attributed to the bound exciton and band-toacceptor transition. The Si doping to CuGaSe2 produces two additional PL bands around 1.61 and 1.64 eV. These PL bands are attributed to the donor acceptor pair emissions due to the doped Si impurity which probably occupies Cu or Ga sites and intrinsic Cu vacancy.

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Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe ₂ thin films

Abstract

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