Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Kwang Soo Seol*, Akihito Ieki, Yoshimichi Ohki, Hiroyuki Nishikawa, Masaharu Tachimori

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

Original languageEnglish
Pages (from-to)412-416
Number of pages5
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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