Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

S. F. Chichibu; T. Sota; P. J. Fons; K. Iwata; A. Yamada; K. Matsubara; S. Niki

doi:10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W

Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

S. F. Chichibu^*, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

Original language	English
Pages (from-to)	171-176
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	192
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W
Publication status	Published - 2002 Jul
Event	4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain Duration: 2002 Mar 11 → 2002 Mar 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Chichibu, S. F., Sota, T., Fons, P. J., Iwata, K., Yamada, A., Matsubara, K., & Niki, S. (2002). Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy. Physica Status Solidi (A) Applied Research, 192(1), 171-176. https://doi.org/10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W

Chichibu, SF, Sota, T, Fons, PJ, Iwata, K, Yamada, A, Matsubara, K & Niki, S 2002, 'Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy', Physica Status Solidi (A) Applied Research, vol. 192, no. 1, pp. 171-176. https://doi.org/10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W

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title = "Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy",

abstract = "Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.",

author = "Chichibu, {S. F.} and T. Sota and Fons, {P. J.} and K. Iwata and A. Yamada and K. Matsubara and S. Niki",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) ; Conference date: 11-03-2002 Through 15-03-2002",

year = "2002",

month = jul,

doi = "10.1002/1521-396X(200207)192:1<171::AID-PSSA171>3.0.CO;2-W",

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T1 - Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

AU - Chichibu, S. F.

AU - Sota, T.

AU - Fons, P. J.

AU - Iwata, K.

AU - Yamada, A.

AU - Matsubara, K.

AU - Niki, S.

PY - 2002/7

Y1 - 2002/7

N2 - Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

AB - Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

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JF - Physica Status Solidi (A) Applied Research

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T2 - 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002)

Y2 - 11 March 2002 through 15 March 2002

ER -

Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

Abstract

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