Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

Atsushi Tackeuchi; Chan Ho Yoo; Tae Whan Kim; Young Hae Kwon; Tae Won Kang; Takao Nukui; Taisuke Fujita; Yoshiaki Nakazato; Yu Saeki; Sotaro Izumi

doi:10.1143/JJAP.49.070201

Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

Atsushi Tackeuchi^*, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, Sotaro Izumi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

Original language	English
Pages (from-to)	702011-702013
Number of pages	3
Journal	Japanese journal of applied physics
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.070201
Publication status	Published - 2010 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.",

author = "Atsushi Tackeuchi and Yoo, {Chan Ho} and Kim, {Tae Whan} and Kwon, {Young Hae} and Kang, {Tae Won} and Takao Nukui and Taisuke Fujita and Yoshiaki Nakazato and Yu Saeki and Sotaro Izumi",

year = "2010",

month = jul,

doi = "10.1143/JJAP.49.070201",

language = "English",

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T1 - Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

AU - Tackeuchi, Atsushi

AU - Yoo, Chan Ho

AU - Kim, Tae Whan

AU - Kwon, Young Hae

AU - Kang, Tae Won

AU - Nukui, Takao

AU - Fujita, Taisuke

AU - Nakazato, Yoshiaki

AU - Saeki, Yu

AU - Izumi, Sotaro

PY - 2010/7

Y1 - 2010/7

N2 - Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

AB - Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

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JO - Japanese journal of applied physics

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IS - 7 PART 1

ER -

Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

Abstract

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