Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi; Tsuguo Inata; Shunichi Muto; Eizo Miyauchi

doi:10.1143/JJAP.28.L750

Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Eizo Miyauchi

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

Original language	English
Pages (from-to)	L750-L753
Journal	Japanese journal of applied physics
Volume	28
Issue number	5A
DOIs	https://doi.org/10.1143/JJAP.28.L750
Publication status	Published - 1989 May
Externally published	Yes

Keywords

Ingaas
Picosecond
Resonant tunneling

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.28.L750

Cite this

@article{d7e18d9dec924cc38a439ad098980b32,

title = "Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling",

abstract = "We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.",

keywords = "Ingaas, Picosecond, Resonant tunneling",

author = "Atsushi Tackeuchi and Tsuguo Inata and Shunichi Muto and Eizo Miyauchi",

year = "1989",

month = may,

doi = "10.1143/JJAP.28.L750",

language = "English",

volume = "28",

pages = "L750--L753",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5A",

}

TY - JOUR

T1 - Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Muto, Shunichi

AU - Miyauchi, Eizo

PY - 1989/5

Y1 - 1989/5

N2 - We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

AB - We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

KW - Ingaas

KW - Picosecond

KW - Resonant tunneling

UR - http://www.scopus.com/inward/record.url?scp=0024662736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024662736&partnerID=8YFLogxK

U2 - 10.1143/JJAP.28.L750

DO - 10.1143/JJAP.28.L750

M3 - Article

AN - SCOPUS:0024662736

SN - 0021-4922

VL - 28

SP - L750-L753

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 5A

ER -

Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this