Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto*, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

Original languageEnglish
Pages (from-to)370-372
Number of pages3
JournalSurface Science
Issue number1-3
Publication statusPublished - 1990 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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