Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto; Atsushi Tackeuchi; Tsuguo Inata; Eizo Miyauchi; Toshio Fujii

doi:10.1016/0039-6028(90)90330-B

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

Shunichi Muto^*, Atsushi Tackeuchi, Tsuguo Inata, Eizo Miyauchi, Toshio Fujii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 10⁵A/cm².

Original language	English
Pages (from-to)	370-372
Number of pages	3
Journal	Surface Science
Volume	228
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90330-B
Publication status	Published - 1990 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(90)90330-B

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title = "Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE",

abstract = "We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.",

author = "Shunichi Muto and Atsushi Tackeuchi and Tsuguo Inata and Eizo Miyauchi and Toshio Fujii",

year = "1990",

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doi = "10.1016/0039-6028(90)90330-B",

language = "English",

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journal = "Surface Science",

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T1 - Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

AU - Muto, Shunichi

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Miyauchi, Eizo

AU - Fujii, Toshio

PY - 1990/4/1

Y1 - 1990/4/1

N2 - We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

AB - We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.

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UR - http://www.scopus.com/inward/citedby.url?scp=44949291974&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90330-B

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VL - 228

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EP - 372

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Picosecond characterization of InGaAs/InAlAs resonant tunneling barriers grown by MBE

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