TY - JOUR
T1 - Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
AU - Tackeuchi, Atsushi
AU - Kuroda, Takamasa
AU - Muto, Shunichi
AU - Wada, Osamu
N1 - Funding Information:
We thank Dr. S. Adachi of Himeji Institute of Technology and Professor H. Ohno of Tohoku University for their useful discussions. This work was supported in part by a Grant-in-Aid for Scientific Research, “Spin Controlled Semiconductor Nanostructures”, and by High-Tech Research Center Project from the Ministry of Education, Science, Sports and Culture. Part of this work was conducted in FESTA Laboratories under the support of New Energy and Industrial Technology Development Organization. A.T. and T.K. acknowledge the support of the Sumitomo Foundation, Hewlett-Packard Japan Ltd. and the Waseda University Grant for Special Research Projects.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.
AB - The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.
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U2 - 10.1016/S0921-4526(99)00383-X
DO - 10.1016/S0921-4526(99)00383-X
M3 - Conference article
AN - SCOPUS:0033344504
SN - 0921-4526
VL - 272
SP - 318
EP - 323
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1-4
T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -