Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Osamu Wada

Research output: Contribution to journalConference articlepeer-review

20 Citations (Scopus)


The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

Original languageEnglish
Pages (from-to)318-323
Number of pages6
JournalPhysica B: Condensed Matter
Issue number1-4
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 1999 Jul 191999 Jul 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells'. Together they form a unique fingerprint.

Cite this