Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi; Tsuguo Inata; Yoshiaki Nakata; Satoshi Nakamura; Yoshihiro Sugiyama; Shunichi Muto

doi:10.1117/12.162795

Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162795
Publication status	Published - 1993
Externally published	Yes
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: 1993 May 23 → 1993 May 28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162795

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title = "Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation",

abstract = "We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.",

author = "Atsushi Tackeuchi and Tsuguo Inata and Yoshiaki Nakata and Satoshi Nakamura and Yoshihiro Sugiyama and Shunichi Muto",

note = "Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

year = "1993",

doi = "10.1117/12.162795",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

AU - Tackeuchi, Atsushi

AU - Inata, Tsuguo

AU - Nakata, Yoshiaki

AU - Nakamura, Satoshi

AU - Sugiyama, Yoshihiro

AU - Muto, Shunichi

PY - 1993

Y1 - 1993

N2 - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

AB - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

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U2 - 10.1117/12.162795

DO - 10.1117/12.162795

M3 - Conference article

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SN - 0277-786X

VL - 1985

SP - 60

EP - 63

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

ER -

Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Abstract

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