TY - JOUR
T1 - Planar-Doping of Molecular Beam Epitaxy Grown Znse With Plasma-Excited Nitrogen
AU - Matsumoto, Shigeyuki
AU - Tosaka, Hiroyuki
AU - Yoshida, Takashi
AU - Kobayashi, Masakazu
AU - Yoshikawa, Akihiko
PY - 1993/2
Y1 - 1993/2
N2 - Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 x 1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.
AB - Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 x 1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.
KW - MBE
KW - Nitrogen plasma
KW - Planar doping
KW - ZnSe
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U2 - 10.1143/JJAP.32.L229
DO - 10.1143/JJAP.32.L229
M3 - Article
AN - SCOPUS:0027544518
SN - 0021-4922
VL - 32
SP - L229-L232
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 2 B
ER -