Polarization-insensitive SOA with a strained bulk active layer for network device application

Masayuki Itoh*, Yasuo Shibata, Takaaki Kakitsuka, Yoshiaki Kadota, Yuichi Tohmori

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

Original languageEnglish
Pages (from-to)765-767
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 2002 Jun
Externally publishedYes


  • Current and wavelength characteristics
  • Gain-difference
  • Network device application
  • Polarization-in-sensitive semiconductor optical amplifier
  • Strain dependence
  • Tensile-strained bulk

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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