Polarization-insensitive SOA with a strained bulk active layer for network device application

Masayuki Itoh; Yasuo Shibata; Takaaki Kakitsuka; Yoshiaki Kadota; Yuichi Tohmori

doi:10.1109/LPT.2002.1003086

Polarization-insensitive SOA with a strained bulk active layer for network device application

Masayuki Itoh^*, Yasuo Shibata, Takaaki Kakitsuka, Yoshiaki Kadota, Yuichi Tohmori

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG _TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG _TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

Original language	English
Pages (from-to)	765-767
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2002.1003086
Publication status	Published - 2002 Jun
Externally published	Yes

Keywords

Current and wavelength characteristics
Gain-difference
Network device application
Polarization-in-sensitive semiconductor optical amplifier
Strain dependence
Tensile-strained bulk

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2002.1003086

Cite this

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abstract = "Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.",

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AU - Itoh, Masayuki

AU - Shibata, Yasuo

AU - Kakitsuka, Takaaki

AU - Kadota, Yoshiaki

AU - Tohmori, Yuichi

PY - 2002/6

Y1 - 2002/6

N2 - Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

AB - Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

KW - Current and wavelength characteristics

KW - Gain-difference

KW - Network device application

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KW - Strain dependence

KW - Tensile-strained bulk

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Polarization-insensitive SOA with a strained bulk active layer for network device application

Abstract

Keywords

ASJC Scopus subject areas

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