Polarized Raman spectra in GaN

T. Azuhata*, T. Sota, K. Suzuki, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

344 Citations (Scopus)


We have measured polarized Raman spectra in a 2.0 mu m GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm -1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as epsilon perpendicular to 0=9.28 and E/sub //0/=10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.

Original languageEnglish
Article number002
Pages (from-to)L129-L133
JournalJournal of Physics: Condensed Matter
Issue number10
Publication statusPublished - 1995 Dec 1

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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