Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer

Ye Du; T. Furubayashi; Y. K. Takahashi; Y. Sakuraba; K. Hono

doi:10.1109/TMAG.2015.2442592

Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co₂Fe(Ga_0.5Ge_0.5) Layer Grown on a Conductive (Mg_0.5Ti_0.5)O Buffer Layer

Ye Du^*, T. Furubayashi, Y. K. Takahashi, Y. Sakuraba, K. Hono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co₂Fe(Ga_0.5Ge_0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg_0.5Ti_0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

Original language	English
Article number	7119594
Journal	IEEE Transactions on Magnetics
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2015.2442592
Publication status	Published - 2015 Nov 1
Externally published	Yes

Keywords

CPP-GMR
Heusler alloy
polycrystals
read head sensors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2015.2442592

Cite this

@article{d2be7c982a2a4cf6ade6bfa5bd03a45d,

title = "Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer",

abstract = "We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.",

keywords = "CPP-GMR, Heusler alloy, polycrystals, read head sensors",

author = "Ye Du and T. Furubayashi and Takahashi, {Y. K.} and Y. Sakuraba and K. Hono",

note = "Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

year = "2015",

month = nov,

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doi = "10.1109/TMAG.2015.2442592",

language = "English",

volume = "51",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Polycrystalline CPP-GMR Pseudospin Valves Using (001) Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti0.5)O Buffer Layer

AU - Du, Ye

AU - Furubayashi, T.

AU - Takahashi, Y. K.

AU - Sakuraba, Y.

AU - Hono, K.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

AB - We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.

KW - CPP-GMR

KW - Heusler alloy

KW - polycrystals

KW - read head sensors

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