Polysilicon Thin-Film Transistors with Channel Length and Width Comparable to or Smaller than the Grain Size of the Thin Film

Noriyoshi Yamauchi; Jean Jacques J. Hajjar; Rafael Reif

doi:10.1109/16.65736

Polysilicon Thin-Film Transistors with Channel Length and Width Comparable to or Smaller than the Grain Size of the Thin Film

Noriyoshi Yamauchi^*, Jean Jacques J. Hajjar, Rafael Reif

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Article › peer-review

115 Citations (Scopus)

Abstract

Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	1
DOIs	https://doi.org/10.1109/16.65736
Publication status	Published - 1991 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.",

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N2 - Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.

AB - Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.

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Polysilicon Thin-Film Transistors with Channel Length and Width Comparable to or Smaller than the Grain Size of the Thin Film

Abstract

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