TY - GEN
T1 - Post deposition treatment of thin film HfO2dielectric for increased performance in MIM capacitors
AU - Petillot, Alaric Yohei Kawai
AU - Shoji, Shuichi
AU - Mizuno, Jun
N1 - Funding Information:
ACKNOWLEDGMENTS The author would like to thank the Japan Ministry of Education, Culture, Sports Science & Technology Grant-in-Aid for Scientific Basic Research (A) No.. 20H00336, (B) No. 20H02181, Waseda University’s Research Organization for Nano & Life Innovation, and the Kagami Memorial Research Institute for Materials Science and Technology.
Publisher Copyright:
© 2022 Japan Institute of Electronics Packaging.
PY - 2022
Y1 - 2022
N2 - Advanced packaging techniques such as heterogeneous packaging become crucial in reducing device sizes for high performance and reliability. For this reason, we require low temperature deposition and fabrication of high-quality thin films aimed towards heterogeneous integration. We propose a simple post deposition treatment of atomic layer deposited thin film dielectrics such as HfO2 using Atmospheric Plasma and Vacuum UV to increase its electrical characteristics. We found that the leak current is reduced by 40-86% for 10-40 nm thick Ar/O2 treated HfO2. XPS analysis reveals that either post deposition treatment greatly reduced carbon contaminants, and AES depth profiling shows the atmospheric plasma increasing oxygen presence on the surface of the HfO2 film.
AB - Advanced packaging techniques such as heterogeneous packaging become crucial in reducing device sizes for high performance and reliability. For this reason, we require low temperature deposition and fabrication of high-quality thin films aimed towards heterogeneous integration. We propose a simple post deposition treatment of atomic layer deposited thin film dielectrics such as HfO2 using Atmospheric Plasma and Vacuum UV to increase its electrical characteristics. We found that the leak current is reduced by 40-86% for 10-40 nm thick Ar/O2 treated HfO2. XPS analysis reveals that either post deposition treatment greatly reduced carbon contaminants, and AES depth profiling shows the atmospheric plasma increasing oxygen presence on the surface of the HfO2 film.
KW - Low temperature fabrication
KW - MIM capacitor
KW - Plasma/VUV treatment
KW - leakage current
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U2 - 10.23919/ICEP55381.2022.9795556
DO - 10.23919/ICEP55381.2022.9795556
M3 - Conference contribution
AN - SCOPUS:85133313619
T3 - 2022 International Conference on Electronics Packaging, ICEP 2022
SP - 169
EP - 170
BT - 2022 International Conference on Electronics Packaging, ICEP 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Electronics Packaging, ICEP 2022
Y2 - 11 May 2022 through 14 May 2022
ER -