Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa*, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

Original languageEnglish
Pages (from-to)1743-1748
Number of pages6
JournalDiamond and Related Materials
Issue number9-10
Publication statusPublished - 2001 Sept


  • Cut-off frequency
  • Diamond
  • Field-effect transistors
  • Hydrogen terminated surface conductive layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering


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