Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa; Hirotada Taniuchi; Takuya Arima; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(01)00406-X

Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa^*, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm^-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency f_T and maximum frequency of oscillation f_max are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of f_T and 30 GHz of f_max.

Original language	English
Pages (from-to)	1743-1748
Number of pages	6
Journal	Diamond and Related Materials
Volume	10
Issue number	9-10
DOIs	https://doi.org/10.1016/S0925-9635(01)00406-X
Publication status	Published - 2001 Sept

Keywords

Cut-off frequency
Diamond
Field-effect transistors
Hydrogen terminated surface conductive layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(01)00406-X

Cite this

@article{723eabe9e8674cfdad233fed75e9e215,

title = "Potential applications of surface channel diamond field-effect transistors",

abstract = "In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.",

keywords = "Cut-off frequency, Diamond, Field-effect transistors, Hydrogen terminated surface conductive layer",

author = "Hitoshi Umezawa and Hirotada Taniuchi and Takuya Arima and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: The authors thank Dr Fujimori and Mr Shikata of Sumitomo Electric Industries for providing the synthetic Ib diamond substrates. The authors also thank Dr Okushi, Dr Takeuchi, Dr Yamanaka of the Electrotechnical laboratory for providing atomically flat homoepitaxial diamond films. This work was supported, in part, by Murata Science Foundation and a Grant-in-aid for General Scientific Research (10450127, 09555103, 11750269) from the Ministry of Education, Science and Culture of Japan, and also supported by a Waseda University Grant for Special Research Project (99A-212).",

year = "2001",

month = sep,

doi = "10.1016/S0925-9635(01)00406-X",

language = "English",

volume = "10",

pages = "1743--1748",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "9-10",

}

TY - JOUR

T1 - Potential applications of surface channel diamond field-effect transistors

AU - Umezawa, Hitoshi

AU - Taniuchi, Hirotada

AU - Arima, Takuya

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: The authors thank Dr Fujimori and Mr Shikata of Sumitomo Electric Industries for providing the synthetic Ib diamond substrates. The authors also thank Dr Okushi, Dr Takeuchi, Dr Yamanaka of the Electrotechnical laboratory for providing atomically flat homoepitaxial diamond films. This work was supported, in part, by Murata Science Foundation and a Grant-in-aid for General Scientific Research (10450127, 09555103, 11750269) from the Ministry of Education, Science and Culture of Japan, and also supported by a Waseda University Grant for Special Research Project (99A-212).

PY - 2001/9

Y1 - 2001/9

N2 - In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

AB - In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

KW - Cut-off frequency

KW - Diamond

KW - Field-effect transistors

KW - Hydrogen terminated surface conductive layer

UR - http://www.scopus.com/inward/record.url?scp=0035448829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035448829&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00406-X

DO - 10.1016/S0925-9635(01)00406-X

M3 - Article

AN - SCOPUS:0035448829

SN - 0925-9635

VL - 10

SP - 1743

EP - 1748

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 9-10

ER -

Potential applications of surface channel diamond field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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