TY - GEN
T1 - Power Durability Evaluation of Higher-Order Mode Polarization-Inverted ScAlN Thin Film Resonators
AU - Shibata, Saneyuki
AU - Yanagitani, Takahiko
N1 - Funding Information:
This work was supported by JST CREST (No. JPMJCR20Q1), JST FOREST, and KAKENHI (Grant-in-Aid for Scientific Research B, No.19H02202, No.21K18734).
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - A number of RF base stations are required for 5G communication compared with 4G because of their high frequency operation. One of the solutions to minimize the RF base stations is to replace the current large dielectric resonator filters with BAW filters. The power durability of 1 W is sufficient for smartphones. However, the power durability of tens of watts is required for RF base stations. High n-th order resonance operation is available for n-th polarization-inverted multilayers. n-Fold thick and n-fold large area (due to 50 Ω matching) in polarization-inverted multilayered resonator enables BAW devices to improve power durability. In this study, we fabricated polarization-inverted ScAlN 1-layer and 4-layer thin films solidly mounted resonator (SMR). The power durability of these devices was compared. The power durability of the 4-layered ScAlN film of 180 mW was 6-times higher than that of the 1-layered ScAlN film of 30 mW.
AB - A number of RF base stations are required for 5G communication compared with 4G because of their high frequency operation. One of the solutions to minimize the RF base stations is to replace the current large dielectric resonator filters with BAW filters. The power durability of 1 W is sufficient for smartphones. However, the power durability of tens of watts is required for RF base stations. High n-th order resonance operation is available for n-th polarization-inverted multilayers. n-Fold thick and n-fold large area (due to 50 Ω matching) in polarization-inverted multilayered resonator enables BAW devices to improve power durability. In this study, we fabricated polarization-inverted ScAlN 1-layer and 4-layer thin films solidly mounted resonator (SMR). The power durability of these devices was compared. The power durability of the 4-layered ScAlN film of 180 mW was 6-times higher than that of the 1-layered ScAlN film of 30 mW.
KW - 5G
KW - base station
KW - BAW filter
KW - heat dissipation
KW - high RF power
KW - polarization inversion
KW - power durability
KW - ScAlN
KW - SMR
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U2 - 10.1109/IUS54386.2022.9957533
DO - 10.1109/IUS54386.2022.9957533
M3 - Conference contribution
AN - SCOPUS:85143835867
T3 - IEEE International Ultrasonics Symposium, IUS
BT - IUS 2022 - IEEE International Ultrasonics Symposium
PB - IEEE Computer Society
T2 - 2022 IEEE International Ultrasonics Symposium, IUS 2022
Y2 - 10 October 2022 through 13 October 2022
ER -