Power spectrum of smoothed line-edge and line-width roughness

Atsushi Hiraiwa*, Akio Nishida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Line-edge and line-width roughness (LER and LWR) is a challenge for device variability control, especially in future devices. Actual device patterns have LER/LWR that is smoothed from the original photoresist patterns used as etching masks. In this study, the LER/LWR of these actual patterns was assumed to have a modified exponential autocorrelation function, which was smoothed by another exponential function. An analytical formula of the discrete power spectral density (PSD) of this LER/LWR was derived on the basis of the previous formula for nonsmoothed LER/LWR, for use in a PSD fitting method. The PSDs calculated using this formula excellently fit the experimental PSDs of both types of polycrystalline-silicon lines without and with sidewall spacers. Through these fittings, it was found that the actual LER/LWR is accurately characterized using the variance and correlation length of the original non-smoothed LER/LWR simply by introducing a third parameter that characterizes the smoothing effect.

Original languageEnglish
Article number086502
JournalJapanese Journal of Applied Physics
Issue number8 PART 1
Publication statusPublished - 2011 Aug

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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