TY - GEN
T1 - Precise detection of singly mismatched DNA with functionalized diamond electrolyte solution gate FET.
AU - Kuga, Shoma
AU - Tajima, Shinya
AU - Yang, Jung Hoon
AU - Hirama, Kazuyuki
AU - Kawarada, Hiroshi
PY - 2008
Y1 - 2008
N2 - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.
AB - The DC operation of diamond electrolyte solution gate FETs (SGFETs) and discrimination of complementary and singly mismatched DNAs in solution were demonstrated. The transconductance (gm), which is the sensitivity for detecting the hybridization of DNA on SGFET, was increased from 60 μS/mm to 9.5 mS/mm by miniaturization of FET. Hybridization of target DNA with probe DNA was detected by the gate potential shift caused by the negative charges on DNA immobilized on the channel surface. The change in gate potential caused by the hybridization of complementary DNA was about 25 mV. The ratio of change in gate potential by hybridization of complementary and single-mismatched DNA was 3:1 on diamond SGFET.
UR - http://www.scopus.com/inward/record.url?scp=64549135737&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=64549135737&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2008.4796731
DO - 10.1109/IEDM.2008.4796731
M3 - Conference contribution
AN - SCOPUS:64549135737
SN - 9781424423781
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008
T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008
Y2 - 15 December 2008 through 17 December 2008
ER -