Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films

Yuya Kajikawa*, Suguru Noda, Hiroshi Komiyama

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He. X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H2.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalChemical Vapor Deposition
Issue number3
Publication statusPublished - 2002 May 1
Externally publishedYes


  • Langmuir-type adsorption
  • Preferred orientation
  • Silicon carbide
  • Theoretical modeling

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology


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