Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

Takayuki Watanabe; Keisuke Saito; Minoru Osada; Hiroshi Funakubo

Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi₄Ti₃O₁₂-based thin films on rutile-type oxides

Takayuki Watanabe^*, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

a- and b-axis-oriented epitaxial Bi₄Ti₃O₁₂ films were prepared on (101)TiO₂ substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO₂, such as RuO₂ and IrO₂. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO₂ and IrO₂ were deposited on not only structurally equivalent (101)RuO₂//(101)TiO₂ and (101)IrO₂//(101)TiO₂ structures, but were also successfully deposited on the corundum (012)Al₂O₃ and (110)Al₂O₃ single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm² was observed for a- and b-axis-oriented Bi₄Ti₃O₁₂-based materials, (Bi_4-xNd_x)(Ti_3-yV_y)O₁₂ (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	155-160
Number of pages	6
Volume	688
Publication status	Published - 2002
Externally published	Yes
Event	Ferroelectric Thin Films X - Boston, MA, United States Duration: 2001 Nov 25 → 2001 Nov 29

Other

Other	Ferroelectric Thin Films X
Country/Territory	United States
City	Boston, MA
Period	01/11/25 → 01/11/29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{fb007d8cabfd442a9544a283ede0f90f,

title = "Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides",

abstract = "a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.",

author = "Takayuki Watanabe and Keisuke Saito and Minoru Osada and Hiroshi Funakubo",

year = "2002",

language = "English",

volume = "688",

pages = "155--160",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Ferroelectric Thin Films X ; Conference date: 25-11-2001 Through 29-11-2001",

}

TY - GEN

T1 - Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

AU - Watanabe, Takayuki

AU - Saito, Keisuke

AU - Osada, Minoru

AU - Funakubo, Hiroshi

PY - 2002

Y1 - 2002

N2 - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

AB - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

UR - http://www.scopus.com/inward/record.url?scp=0036353527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036353527&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036353527

VL - 688

SP - 155

EP - 160

BT - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films X

Y2 - 25 November 2001 through 29 November 2001

ER -

Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi₄Ti₃O₁₂-based thin films on rutile-type oxides

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this