Preparation and Characterization of a New Ge-Sb-Te Thin Film

Tomohiro Suzuki*, Takahiro Ishizaki, Satoru Mori, Akio Fuwa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    Ge 10Sb 67.5Te 22.5 thin films were prepared by RF magnetron sputtering from a single high purity Ge 10Sb 67.5Te 22.5 target under the following condition: RF power: 30 W, Ar pressure: 1.067 Pa, Ar flow: 9 ccm, substrate temperature: room temperature (water cooling), distance between target and substrate: 7 cm, and sputtering time: 10∼40 min. Although the as-deposited film was amorphous, annealing for 30 min at 573 K allowed it to be crystallized. The crystallization temperature and the activation energy of Ge 10Sb 67.5Te 22.5 thin film were around 463 K and 2.50 eV, respectively, while those of Ge 2Sb 2Te 5 thin film, prepared under the same conditions as stated above, were around 408 K and 2.04 eV, respectively. The difference of optical constants between crystalline and amorphous phases of Ge 10Sb 67.5Te 22.5 and Ge 2Sb 2Te 5 thin films were -0.9 + i0.93 and -0.77 + i0.67, respectively, in a blue laser area, i.e., wavelength 405 nm.

    Original languageEnglish
    Pages (from-to)90-93
    Number of pages4
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Issue number2
    Publication statusPublished - 2004 Feb


    • Activation energy
    • Germanium-antimony- tellurium
    • Optical constant
    • Phase change optical disk
    • Sputtering

    ASJC Scopus subject areas

    • Metals and Alloys


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