Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures

H. Tashiro, R. Suzuki, T. Miyawaki, K. Ueda, H. Asano*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.

Original languageEnglish
Pages (from-to)299-301
Number of pages3
JournalJournal of the Korean Physical Society
Volume63
Issue number3
DOIs
Publication statusPublished - 2013 Aug
Externally publishedYes

Keywords

  • Inverse perovskite structure
  • Magnetocapacitance
  • MnGaN

ASJC Scopus subject areas

  • General Physics and Astronomy

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