TY - JOUR
T1 - Preparation of Ordered Nanoporous Indium Tin Oxides with Large Crystallites and Individual Control over Their Thermal and Electrical Conductivities
AU - Saito, Yumi
AU - Matsuno, Takamichi
AU - Guo, Quansheng
AU - Mori, Takao
AU - Kashiwagi, Makoto
AU - Shimojima, Atsushi
AU - Wada, Hiroaki
AU - Kuroda, Kazuyuki
N1 - Funding Information:
The authors are grateful to Dr. T. Shiga (University of Tokyo) for the fruitful discussions; Mr. T. Goto (Waseda University) for the XPS measurements; Mr. S. Enomoto, Mr. M. Koike, and Mr. G. Koinuma (Waseda University) for the TEM analysis. This work was supported by a Grant-in-Aid for Scientific Research (A) (Grant Number JP19H00833). T. Mori acknowledges support from JST-Mirai JPMJMI19A1, and T. Matsuno acknowledges the Grant-in-Aid for JSPS Fellows (Grant Number JP19J13784).
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/4/7
Y1 - 2021/4/7
N2 - Metal oxides are considered suitable candidates for thermoelectric materials owing to their high chemical stabilities. The formation of ordered nanopores within these materials, which decreases thermal conductivity (κ), has attracted significant interest. However, the electrical conductivity (σ) of reported nanoporous metal oxides is low, owing to electron scattering at the thin pore walls and many grain boundaries formed by small crystallites. Therefore, a novel synthesis method that can control pore walls while forming relatively large crystallites to reduce κ and retain σ is required. In this study, we used indium tin oxide (ITO), which is a typical example among metal oxides with high σ. Nanoporous ITOs with large crystallite sizes of several hundred nanometers and larger were successfully prepared using indium chloride as a source of indium. The pore sizes were varied using colloidal silica nanoparticles with different particle sizes as templates. The crystal phase and nanoporous structure of ITO were preserved after spark plasma sintering at 723 K and 80 MPa. The κ was significantly lower than that reported for bulk ITO due to the phonon scattering caused by the nanoporous structure and thin pore walls. There was a limited decrease in σ even with high porosity. These findings show that κ and σ are independently controllable through the precise control of the structure. The control of the thickness of the pore walls at tens of nanometers was effective for the selective scattering of phonons, while almost retaining electron mobility. The remarkable preservation of σ was attributed to the large crystallites that maintained paths for electron conduction and decreased electron scattering at the grain boundaries.
AB - Metal oxides are considered suitable candidates for thermoelectric materials owing to their high chemical stabilities. The formation of ordered nanopores within these materials, which decreases thermal conductivity (κ), has attracted significant interest. However, the electrical conductivity (σ) of reported nanoporous metal oxides is low, owing to electron scattering at the thin pore walls and many grain boundaries formed by small crystallites. Therefore, a novel synthesis method that can control pore walls while forming relatively large crystallites to reduce κ and retain σ is required. In this study, we used indium tin oxide (ITO), which is a typical example among metal oxides with high σ. Nanoporous ITOs with large crystallite sizes of several hundred nanometers and larger were successfully prepared using indium chloride as a source of indium. The pore sizes were varied using colloidal silica nanoparticles with different particle sizes as templates. The crystal phase and nanoporous structure of ITO were preserved after spark plasma sintering at 723 K and 80 MPa. The κ was significantly lower than that reported for bulk ITO due to the phonon scattering caused by the nanoporous structure and thin pore walls. There was a limited decrease in σ even with high porosity. These findings show that κ and σ are independently controllable through the precise control of the structure. The control of the thickness of the pore walls at tens of nanometers was effective for the selective scattering of phonons, while almost retaining electron mobility. The remarkable preservation of σ was attributed to the large crystallites that maintained paths for electron conduction and decreased electron scattering at the grain boundaries.
KW - electrical conductivity
KW - indium tin oxide
KW - inverse opal structure
KW - ordered nanoporous oxide
KW - thermal conductivity
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U2 - 10.1021/acsami.0c23133
DO - 10.1021/acsami.0c23133
M3 - Article
C2 - 33764729
AN - SCOPUS:85104048110
SN - 1944-8244
VL - 13
SP - 15373
EP - 15382
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 13
ER -