Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

Tomo Sakanoue; Eiichi Fujiwara; Ryo Yamada; Hirokazu Tada

doi:10.1246/cl.2005.494

Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

Tomo Sakanoue, Eiichi Fujiwara, Ryo Yamada, Hirokazu Tada^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Light-emitting field-effect transistors (LEFET) based on poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO ₂ gate insulator (600 nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40 V at the drain voltage of -100 V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

Original language	English
Pages (from-to)	494-495
Number of pages	2
Journal	Chemistry Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1246/cl.2005.494
Publication status	Published - 2005 Apr 5
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)

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10.1246/cl.2005.494

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AU - Sakanoue, Tomo

AU - Fujiwara, Eiichi

AU - Yamada, Ryo

AU - Tada, Hirokazu

PY - 2005/4/5

Y1 - 2005/4/5

N2 - Light-emitting field-effect transistors (LEFET) based on poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO 2 gate insulator (600 nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40 V at the drain voltage of -100 V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

AB - Light-emitting field-effect transistors (LEFET) based on poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV) were prepared with asymmetric electrodes of a Au/Cr source and an Al drain on a SiO 2 gate insulator (600 nm) through twice of photolithography and lift-off techniques. The light emission was observed when the gate voltages increased above -40 V at the drain voltage of -100 V. The luminous efficiency of the devices was significantly improved comparing to those with conventional electrodes of Au/Cr.

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Preparation of organic light-emitting field-effect transistors with asymmetric electrodes

Abstract

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