Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

Masatoshi Mitsuya; Minoru Osada; Keisuke Saito; Hiroshi Funakubo

doi:10.1016/S0022-0248(01)01985-6

Preparation of SrBi₂(Ta_0.7Nb_0.3)₂O₉-Bi ₃TaTiO₉ solid solution films by MOCVD and their properties

Masatoshi Mitsuya, Minoru Osada, Keisuke Saito, Hiroshi Funakubo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Thin films of solid solution of SrBi₂(Ta_0.7Nb_0.3)₂O₉-Bi ₃TaTiO₉ [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO₂/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr_0.8Bi_2.2(Ta_0.7Nb_0.3)₂O ₉ film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr_0.8Bi_2.2(Ta_0.7Nb_0.3)₂O ₉.

Original language	English
Pages (from-to)	473-477
Number of pages	5
Journal	Journal of Crystal Growth
Volume	237-239
Issue number	1-4 I
DOIs	https://doi.org/10.1016/S0022-0248(01)01985-6
Publication status	Published - 2002 Apr
Externally published	Yes

Keywords

A1. Solid solutions
A3. Chemical vapor deposition processes
B1. Inorganic compounds
B2. Ferroelectric materials

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1016/S0022-0248(01)01985-6

Cite this

@article{9f983dad18734fcbada6893f556592b7,

title = "Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties",

abstract = "Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.",

keywords = "A1. Solid solutions, A3. Chemical vapor deposition processes, B1. Inorganic compounds, B2. Ferroelectric materials",

author = "Masatoshi Mitsuya and Minoru Osada and Keisuke Saito and Hiroshi Funakubo",

year = "2002",

month = apr,

doi = "10.1016/S0022-0248(01)01985-6",

language = "English",

volume = "237-239",

pages = "473--477",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4 I",

}

TY - JOUR

T1 - Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

AU - Mitsuya, Masatoshi

AU - Osada, Minoru

AU - Saito, Keisuke

AU - Funakubo, Hiroshi

PY - 2002/4

Y1 - 2002/4

N2 - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

AB - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

KW - A1. Solid solutions

KW - A3. Chemical vapor deposition processes

KW - B1. Inorganic compounds

KW - B2. Ferroelectric materials

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VL - 237-239

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JO - Journal of Crystal Growth

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