Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

Takashi Nishimura; Takamichi Ichikawa; Nagahiro Saito; Akio Fuwa

Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

Takashi Nishimura^*, Takamichi Ichikawa, Nagahiro Saito, Akio Fuwa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC₄H₉)₄, Y(DPM)₃ and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

Original language	English
Title of host publication	Proceedings of the Second International Conference on Processing Materials for Properties
Editors	B. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages	267-270
Number of pages	4
Publication status	Published - 2000
Event	Proceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA Duration: 2000 Nov 5 → 2000 Nov 8

Other

Other	Proceedings of the Second International Conference on Processing Materials for Properties
City	San Francisco, CA
Period	00/11/5 → 00/11/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. / Nishimura, Takashi; Ichikawa, Takamichi; Saito, Nagahiro et al.

Proceedings of the Second International Conference on Processing Materials for Properties. ed. / B. Mishra; C, Yamauchi; B. Mishra; C. Yamauchi. 2000. p. 267-270.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishimura, T, Ichikawa, T, Saito, N & Fuwa, A 2000, Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 267-270, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, 00/11/5.

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title = "Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition",

abstract = "Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.",

author = "Takashi Nishimura and Takamichi Ichikawa and Nagahiro Saito and Akio Fuwa",

year = "2000",

language = "English",

isbn = "087339495X",

pages = "267--270",

editor = "B. Mishra and C, Yamauchi and B. Mishra and C. Yamauchi",

booktitle = "Proceedings of the Second International Conference on Processing Materials for Properties",

note = "Proceedings of the Second International Conference on Processing Materials for Properties ; Conference date: 05-11-2000 Through 08-11-2000",

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T1 - Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

AU - Nishimura, Takashi

AU - Ichikawa, Takamichi

AU - Saito, Nagahiro

AU - Fuwa, Akio

PY - 2000

Y1 - 2000

N2 - Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

AB - Yttria-stabilized zirconia (YSZ) has high potential to be used as solid-oxide fuel cell (SOFC) electrolyte. However, the high efficiency of SOFC has not been yet achieved due to the high internal resistance of bulk electrolyte. The resistance becomes lower with the decrease in the electrolyte thickness. Thus, the decrease in electrolyte thickness leads to lower internal resistance. The aim of this study is as follows: (a) to prepare the thin films of YSZ by inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition (PEMOCVD) process using Zr(t-OC4H9)4, Y(DPM)3 and oxygen, and (b) to reveal the relationship between the structural characterizations and the process parameters.

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M3 - Conference contribution

AN - SCOPUS:0034592396

SN - 087339495X

SP - 267

EP - 270

BT - Proceedings of the Second International Conference on Processing Materials for Properties

A2 - Mishra, B.

A2 - Yamauchi, C,

A2 - Mishra, B.

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T2 - Proceedings of the Second International Conference on Processing Materials for Properties

Y2 - 5 November 2000 through 8 November 2000

ER -

Preparation of YSZ thin films by RF plasma-enhanced metal organic chemical vapor depodition

Abstract

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ASJC Scopus subject areas

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