TY - JOUR
T1 - Pressure effect of superconducting transition temperature for boron-doped (111) diamond films
AU - Oki, N.
AU - Kagayama, T.
AU - Shimizu, K.
AU - Kawarada, H.
PY - 2010
Y1 - 2010
N2 - Many studies on superconductivity of boron-doped diamond (BDD) have been done, and it is well known that the superconducting transition temperature Tc of BDD films depend on the boron concentration and the growth direction. Uniaxial like pressure along (111) direction was applied on boron-doped (111) diamond films synthesized by CVD method using a diamond-anvil cell (DAC) up to 18.5 GPa. The Tc was decreased as previous report, however the changing rate is smaller than other experiments with hydrostatic pressures and a theoretical prediction.
AB - Many studies on superconductivity of boron-doped diamond (BDD) have been done, and it is well known that the superconducting transition temperature Tc of BDD films depend on the boron concentration and the growth direction. Uniaxial like pressure along (111) direction was applied on boron-doped (111) diamond films synthesized by CVD method using a diamond-anvil cell (DAC) up to 18.5 GPa. The Tc was decreased as previous report, however the changing rate is smaller than other experiments with hydrostatic pressures and a theoretical prediction.
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U2 - 10.1088/1742-6596/215/1/012143
DO - 10.1088/1742-6596/215/1/012143
M3 - Article
AN - SCOPUS:77951961173
SN - 1742-6588
VL - 215
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
M1 - 012143
ER -