Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v

Shunsuke Yamada; Takaaki Sato; Hiroshi Toshiyoshi

doi:10.1109/TRANSDUCERS.2017.7994161

Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v

Shunsuke Yamada^*, Takaaki Sato, Hiroshi Toshiyoshi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa^-1, which is at least 10 times greater than the conventional reports.

Original language	English
Title of host publication	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	766-769
Number of pages	4
ISBN (Electronic)	9781538627310
DOIs	https://doi.org/10.1109/TRANSDUCERS.2017.7994161
Publication status	Published - 2017 Jul 26
Externally published	Yes
Event	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan, Province of China Duration: 2017 Jun 18 → 2017 Jun 22

Publication series

Name	TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other	19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	17/6/18 → 17/6/22

Keywords

Ionic liquid
metal oxide semiconductor
tactile sensor and MOSFET

ASJC Scopus subject areas

Chemical Health and Safety
Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/TRANSDUCERS.2017.7994161

Cite this

Yamada, S., Sato, T., & Toshiyoshi, H. (2017). Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 766-769). [7994161] (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994161

Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v. / Yamada, Shunsuke; Sato, Takaaki; Toshiyoshi, Hiroshi.
TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 766-769 7994161 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamada, S, Sato, T & Toshiyoshi, H 2017, Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v. in TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994161, TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 766-769, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, Taiwan, Province of China, 17/6/18. https://doi.org/10.1109/TRANSDUCERS.2017.7994161

Yamada S, Sato T, Toshiyoshi H. Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 766-769. 7994161. (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/TRANSDUCERS.2017.7994161

Yamada, Shunsuke ; Sato, Takaaki ; Toshiyoshi, Hiroshi. / Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa^-1 operated under 2 v. TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 766-769 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

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