Probability of Atomic or Molecular Oxygen Species in Silicon and Silicon Dioxide

Tadatsugu Hoshino*, Masayuki Hata, Saburo Neya, Yasushiro Nishioka, Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Quantum chemical calculations were performed to investigate the probabilities of the existence of molecular and atomic oxygen inside Si and SiO2. Optimized configurations were obtained for both Si and SiO 2 clusters including an O2 molecule or an O atom in the spin singlet or triplet state. The spin triplet O2 molecule is the most favorable in SiO2, while the spin singlet O atom is dominant in Si. The diffusion of an O2 molecule from the outside to the inside of SiO2 was computed with its potential energy change. The dissociation reaction of an O2 molecule at the SiO2/Si interface and the transfer reaction of an O atom across the SiO2/Si interface were also examined by estimating for their energy barriers.

Original languageEnglish
Pages (from-to)6535-6542
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - 2003 Oct


  • Atomic oxygen
  • Molecular oxygen
  • Silicon oxidation
  • Spin electronic state
  • Theoretical calculation

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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