Probing spatial heterogeneity in silicon thin films by Raman spectroscopy

Hideyuki Yamazaki*, Mitsuo Koike, Masumi Saitoh, Mitsuhiro Tomita, Ryo Yokogawa, Naomi Sawamoto, Motohiro Tomita, Daisuke Kosemura, Atsushi Ogura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra from multiple positions on a sample within a short time. Here, we report a novel Raman spectroscopy approach to study the spatial heterogeneity in thermally annealed amorphous silicon (a-Si) thin films. Raman spectroscopy employs both a galvano-mirror and a two-dimensional charge-coupled device detector system, which can measure spectra at 200 nm intervals at every position along a sample in a short time. We analyzed thermally annealed a-Si thin films with different film thicknesses. The experimental results suggest a correlation between the distribution of the average nanocrystal size over different spatial regions and the thickness of the thermally annealed a-Si thin film. The ability to evaluate the average size of the Si nanocrystals through rapid data acquisition is expected to lead to research into new applications of nanocrystals.

Original languageEnglish
Article number16549
JournalScientific reports
Issue number1
Publication statusPublished - 2017 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • General


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