Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

Yusuke Mori; Hiroshi Kawarada; Akio Hiraki

doi:10.1063/1.104484

Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

Yusuke Mori^*, Hiroshi Kawarada, Akio Hiraki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

130 Citations (Scopus)

Abstract

The current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films depend on the electronegativities of metals. However for diamond films oxidized by boiling in a saturated solution of CrO in H ₂SO₄ or by exposure to an oxygen plasma, this dependence vanishes. This is because of the adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition. It has been shown by x-ray photoelectron spectroscopy that very little oxide is present on the as-grown surfaces, but that at least submonolayer oxygen coverage is present on the oxidized surfaces.

Original language	English
Pages (from-to)	940-941
Number of pages	2
Journal	Applied Physics Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1063/1.104484
Publication status	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films depend on the electronegativities of metals. However for diamond films oxidized by boiling in a saturated solution of CrO in H 2SO4 or by exposure to an oxygen plasma, this dependence vanishes. This is because of the adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition. It has been shown by x-ray photoelectron spectroscopy that very little oxide is present on the as-grown surfaces, but that at least submonolayer oxygen coverage is present on the oxidized surfaces.",

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year = "1991",

doi = "10.1063/1.104484",

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T1 - Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

AU - Mori, Yusuke

AU - Kawarada, Hiroshi

AU - Hiraki, Akio

PY - 1991

Y1 - 1991

N2 - The current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films depend on the electronegativities of metals. However for diamond films oxidized by boiling in a saturated solution of CrO in H 2SO4 or by exposure to an oxygen plasma, this dependence vanishes. This is because of the adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition. It has been shown by x-ray photoelectron spectroscopy that very little oxide is present on the as-grown surfaces, but that at least submonolayer oxygen coverage is present on the oxidized surfaces.

AB - The current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films depend on the electronegativities of metals. However for diamond films oxidized by boiling in a saturated solution of CrO in H 2SO4 or by exposure to an oxygen plasma, this dependence vanishes. This is because of the adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition. It has been shown by x-ray photoelectron spectroscopy that very little oxide is present on the as-grown surfaces, but that at least submonolayer oxygen coverage is present on the oxidized surfaces.

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Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

Abstract

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